Bela Pecz

Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, MTA EK MFA, 1121 Budapest, Konkoly-Thege M. u. 29-33, Hungary

The talk gives an overview of development of wide bandgap semiconductors via the growth of heteroepitaxial layers and their investigation by transmission electron microscopy. The feedback of microscopy helped crystal growers to decrease the dislocation density in nitride layers. Example of epitaxial lateral overgrowth is discussed. Optoelectronic devices request homogeneous layers and sharp interfaces. Beside the optoelectronic devices high power GaN based transistors were also prepared and their self-heating became a major issue. This paper reviews couple of possible solution of that problem with the combination of materials with high thermal conductivity like diamond, or graphene. Finally, some examples of 2D nitride semiconductors will be shown.