Bela Pecz, Growth of wide bandgap semiconducting layers: a transmission electron microscopy study
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
Openning
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
Yury Gogotsi - Award for a Lasting and Outstanding Contribution to Materials Science and Engineering
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
In Between
YUCOMAT 2021
Awards & Closing
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
Audience
YUCOMAT 2021
Discussion
YUCOMAT 2021
In Between
YUCOMAT 2021
Poster Session
YUCOMAT 2021
Audience
YUCOMAT 2021
Discussion
YUCOMAT 2021
Audience - outside
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Discussion
YUCOMAT 2021
Herceg Novi, Montenegro
YUCOMAT 2021
In Between
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Herceg Novi, Montenegro
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Audience
YUCOMAT 2021
Herceg Novi, Montenegro

Bela Pecz

Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, MTA EK MFA, 1121 Budapest, Konkoly-Thege M. u. 29-33, Hungary

The talk gives an overview of development of wide bandgap semiconductors via the growth of heteroepitaxial layers and their investigation by transmission electron microscopy. The feedback of microscopy helped crystal growers to decrease the dislocation density in nitride layers. Example of epitaxial lateral overgrowth is discussed. Optoelectronic devices request homogeneous layers and sharp interfaces. Beside the optoelectronic devices high power GaN based transistors were also prepared and their self-heating became a major issue. This paper reviews couple of possible solution of that problem with the combination of materials with high thermal conductivity like diamond, or graphene. Finally, some examples of 2D nitride semiconductors will be shown.

Plenary lectures - YUCOMAT 2018

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