Danilo Suvorov: Epitaxial integration of oxides with silicon
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
Openning
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Competition : : Best Poster Presentation
YUCOMAT 2021
Yury Gogotsi - Award for a Lasting and Outstanding Contribution to Materials Science and Engineering
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
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Awards & Closing
YUCOMAT 2021
Herceg Novi, Montenegro, 2021
YUCOMAT 2021
Audience
YUCOMAT 2021
Discussion
YUCOMAT 2021
In Between
YUCOMAT 2021
Poster Session
YUCOMAT 2021
Audience
YUCOMAT 2021
Discussion
YUCOMAT 2021
Audience - outside
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Discussion
YUCOMAT 2021
Herceg Novi, Montenegro
YUCOMAT 2021
In Between
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Herceg Novi, Montenegro
YUCOMAT 2021
MRS Serbia
YUCOMAT 2021
Audience
YUCOMAT 2021
Herceg Novi, Montenegro

Danilo Suvorov, Daniel Diaz, Tjaša Parkelj, Urška Gabor and Matjaž Spreitzer

 

Advanced Materials Department, Jožef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia;  This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the well-established silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using mainly Molecular Beam Epitaxy (MBE) and Atomic-Layer Deposition (ALD) methods. However, slow deposition processes and difficult stoichiometry control make these methods inappropriate from an industrial point of view. Alternative way of this two sets of material in a unique way is synthesis with Pulse Laser Deposition (PLD) which is the subject of this talk.

The epitaxial growth of functional oxides on silicon substrates with PLD requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition, with out-of plane relationship of STO(001)║Si(001) and in-plane relationship of STO[110]║Si[100]. Detailed study of initial deposition parameters in terms of background gas pressure, deposition temperature, fluence, and oxidation proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate Pb[Mg1/3Nb2/3]O3-PbTiO3 (PMN-PT) films were gown for applications in microelectromechanical systems, due to its high values of longitudinal piezoelectric coefficients and electromechanical coupling. In this presentation growth peculiarities of PMN-PT thin films, including the effect of lead surplus and bottom electrode will also be outlined.

Plenary lectures - YUCOMAT 2019

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